Growth and Characterization of AlGaN-related Nitride Films and Light-Emitting Diodes
博士 === 逢甲大學 === 材料科學所 === 94 === In this dissertation, the characteristics of III-nitride films (or light–emitting diodes) grown on Si (or sapphire substrates) were investigated. For the III-nitride film growth, atomic layer deposition (ALD) was employed to grow GaN and AlGaN films on Si substrates....
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/98598098672633555797 |