The GaN MOS photodetector with ITO transparent electrode
碩士 === 大葉大學 === 電機工程學系碩士班 === 94 === Low-temperature liquid phase deposition (LPD) techniques have been implemented to deposit SiO2 instead of conventional thermal and plasma oxide which result in thermal effect and surface defects on device characteristics. The LPD has many advantages of high quali...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/03290032408796651618 |