Field Emission Properties of C60 and C60 Doped C59N Polycrystalline Films

• Main Authors: Jhu-Jyun Syu, 徐竹君
• Other Authors: Kuan-cheng Chiu
• Format: Others
• Language: zh-TW
• Online Access: http://ndltd.ncl.edu.tw/handle/30002189115268463316

碩士 === 中原大學 === 應用物理研究所 === 94 === The C60 and heterofullerenes C59N powders are synthesized and are further extracted from column liquid chromatography, by a dc-arc furnace in a mixture of nitrogen-helium atmosphere. Then the polycrystalline films of C60 and C60 doped C59N are grown on heavily doped p- and n-type Si substrates by physical vapor deposition (PVD) and solvent evaporation (SE) techniques. The scanning electron microscope (SEM) images are used to study surface morphology of the SE films. In contrast to the rod like morphology for the films grown by SE, the films grown by PVD are very compact with cubic grains. Finally, we investigate the field emission behaviors to find field emission characteristics such as threshold field, field emission enhancement factor and current density with respect to different deposition conditions.