Optical properties of silicon nanocrystals grown in silicon oxide layer

• Main Authors: Yu-Hsiang Huang, 黃昱翔
• Other Authors: Ji-Lin Shen
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/90375065509463562781

碩士 === 中原大學 === 應用物理研究所 === 94 === Photoluminescence (PL) of silicon nanocrystals embedded in SiO2 matrix were studied using the continuous and time-resolved PL measurements. The silicon nanocrystals were fabricated by atmospheric pressure chemical vapor deposition (APCVD) method and annealed in CO2 and O2. The PL intensity and decay time were increased due to the passivation of nonradiative states with oxygen atoms. Furthermore, the studies of temperature-dependent PL intensity reveal that the recombination processes should include radiative and nonradiative recombination processes. The localization effect is also proved by emission-dependent time-resolved PL. The depth of localization state due to the disorder between Si and SiO2 could be increased by increasing the annealing temperature.