The Study of Erasing Charge Profiling Distribution in Novel Memory Devices
碩士 === 中原大學 === 電子工程研究所 === 94 === Recently, the discrete charge trapping non-volatile memory (NVM) devices received much attention due to their potential multi-bit storage in a unit cell. In contrast to those floating gate memories, oxide-nitride-oxide (ONO) charge trapping structures are explored...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93908362894035476316 |