The use of noise spectrum to characterize the EMI on MESFET
碩士 === 正修科技大學 === 電子工程研究所 === 94 === The depletion type GaAs Metal-Semiconductor Field Effect Transistor （MESFET）is investigated in this disquisition. The use of noise spectrum to characterize the Electro Magnetic Interference（EMI）and low-frequency noise on MESFET. In the experiment, we use Agilent...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58873209938714510988 |