The use of noise spectrum to characterize the EMI on MESFET
碩士 === 正修科技大學 === 電子工程研究所 === 94 === The depletion type GaAs Metal-Semiconductor Field Effect Transistor （MESFET）is investigated in this disquisition. The use of noise spectrum to characterize the Electro Magnetic Interference（EMI）and low-frequency noise on MESFET. In the experiment, we use Agilent...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/58873209938714510988 |
| Summary: | 碩士 === 正修科技大學 === 電子工程研究所 === 94 === The depletion type GaAs Metal-Semiconductor Field Effect Transistor （MESFET）is investigated in this disquisition. The use of noise spectrum to characterize the Electro Magnetic Interference（EMI）and low-frequency noise on MESFET. In the experiment, we use Agilent 4156C semiconductor parameter analyzer to measurements the current-voltage characteristics of MESFET devices. The low-frequency noise measurements were performed using a SR560 Low-Noise Preamplifier in conjunction with an Agilent E4440A PSA Series Spectrum Analyzer. Measurement results reveal that the magnitude of the EMI-induced noise is related to the corresponsive pulse height, the output load, the parasitic capacitance, the interference frequency and the interference amplitude. It is shown that a higher interference amplitude or interference frequency increases the harmonic noise.
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