Influence of Channel Thickness on Electrical Characteristics for SiGe PMOSFET

• Main Authors: Chung-Hsiung Lin, 林忠雄
• Other Authors: 吳三連
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/60392570943046380458

碩士 === 正修科技大學 === 電子工程研究所 === 94 === In this thesis, p-type Si/SiGe metal-oxide-semiconductor field effect transistor (PMOSFET) with different SiGe thickness have been proposed and fabricated. The influence of SiGe-layer thickness on the electrical performances of SiGe PMOSFET has been investigated. Devices with thicker SiGe channel have better mobility due to the more holes are confined in the SiGe channel than that of device with thinner one. Experimental results show that the device with thicker SiGe-channel layer exhibits the excellent property not only higher drain-to-source saturation current and higher transconductance, but also enhancement in gate voltage swing, which is promising to provide an additional degree of freedom for Si-based device application.