Application of Organic Materials and Low-temperature Process IZO film for TFT Display Matrix Technology

• Main Authors: Cheng-Hsien Cho, 卓政憲
• Other Authors: Wu-Shiung Feng
• Format: Others
• Language: en_US
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/86309689054098280193

碩士 === 長庚大學 === 電子工程研究所 === 94 === In this thesis, we investigate the application of low-dielectric-constant(low-k) organic layer for α-Si TFT-LCD (Amorphous Silicon Thin Film Transistor) LCD (Liquid Crystal Display) Array-Matrix technology. First, the adoption of low-k organic layer for α-Si TFT-LCD can effectively increase the aperture ratio of TFT display matrix, promote planarization of TFT display matrix, and reduce the resistance capacitance delay (RC delay) between pixel electrode to Source/Drain signal line, and reduce the boundary electric field effect. By the way, we will discuss about the organic layer to substitute for passivation layer issue. Second, we try to take low temperature process for IZO (Indium-Zinc-Oxide) implementation to substitute the high temperature process for ITO (Indium-Tin-Oxide) implementation. In this experiment, we can obtain good etching properties with increasing the rework rate and will be discussed extensively in the application of production. In conclusion, we have found that the organic layer and low temperature process for IZO implementation can effectively increase the aperture ratio of α-Si TFT-LCD, obtain good stability properties of TFT I-V curve, and increase energy resources efficiency.