Study of Mg Doping Profile in InGaN-GaN Light-Emitting Diodes with AlGaN Electron-Blocking Barrier
碩士 === 長庚大學 === 電子工程研究所 === 94 === Abstract The blue InGaN–GaN multiple quantum well light-emitting diodes (LEDs) were grown on sapphire substrates using metal–organic vapor phase epitaxy system. The Mg-doped AlGaN electron-blocking (EB) barrier was introduced under various Cp2Mg flow conditions at...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22468066343905144296 |