Study on Poly-Ge and Ge nano dot Nonvolatil Memory Devices
碩士 === 長庚大學 === 電子工程研究所 === 94 === Nowadays the portable electronic devices demand the nonvolatile memory that is lower power consumption, high density, faster read and write speed, and longer memory period. In addition, after times of read and write, the read voltage and write voltage cannot be cha...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/78647455765973010626 |