Characterization of III-V Nitride Semiconductors Material and LED Device
碩士 === 長庚大學 === 光電工程研究所 === 94 === This thesis concerned with the studies on the optical properties of AlGaN/GaN heterostructure and InGaN/InGaN multiple quantum wells, the silicon doping effect on InGaN/InGaN quantum wells. The content had three major parts. (1) Optical properties in AlGaN/GaN hete...
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Format: | Others |
Language: | zh-TW |
Published: |
2006
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Online Access: | http://ndltd.ncl.edu.tw/handle/97533179344137603503 |