Effect of superlattice inserted structure on the characteristics of InGaN multiple quantum well light emitting diodes
碩士 === 國立中正大學 === 光機電整合工程所 === 94 === In this study, we report the investigations on the characteristics of GaN-based LEDs having various Al0.3Ga0.7N(2nm)/GaN(2nm) SPSL-inserted structures in the underlying GaN layers of the LED structures. The Al0.3Ga0.7N(2nm)/GaN (2nm) SPSL inserted GaN-based LEDs...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59999125263272552247 |