Effect of superlattice inserted structure on the characteristics of InGaN multiple quantum well light emitting diodes
碩士 === 國立中正大學 === 光機電整合工程所 === 94 === In this study, we report the investigations on the characteristics of GaN-based LEDs having various Al0.3Ga0.7N(2nm)/GaN(2nm) SPSL-inserted structures in the underlying GaN layers of the LED structures. The Al0.3Ga0.7N(2nm)/GaN (2nm) SPSL inserted GaN-based LEDs...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/59999125263272552247 |
| Summary: | 碩士 === 國立中正大學 === 光機電整合工程所 === 94 === In this study, we report the investigations on the characteristics of GaN-based LEDs having various Al0.3Ga0.7N(2nm)/GaN(2nm) SPSL-inserted structures in the underlying GaN layers of the LED structures. The Al0.3Ga0.7N(2nm)/GaN (2nm) SPSL inserted GaN-based LEDs were found to exhibit improved device characteristics including decrements in ideality factor and reverse leakage current as well as enhancements of electroluminescence (EL) and photoluminescence (PL) intensities. The results of transmission electron microscopic observations reveal the filtering of threading dislocations (TDs) near the Al0.3Ga0.7N(2nm)/GaN (2nm) SPSL structure of the SPSL-inserted GaN-based LEDs. It is believed that the SPSL-induced TD density reduction in the SPSL-inserted GaN-based LED structures enables the improved device characteristics.
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