Fabrication of deep sub-micrometer silicon cylinder array using e-beam lithography and reactive ion etching
碩士 === 國立中正大學 === 物理所 === 94 === In electron beam lithography, the matter wave length of electron, which be added 20 keV voltage, is pproximately 10-11m. The wave length is smaller than 193 nm or 157 nm that the Optical lithography excimer laser wave length has. In general, the electron beam lithog...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
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| Online Access: | http://ndltd.ncl.edu.tw/handle/00880349585709860408 |