Magneto Impedance Behaviors of Pseudo Spin Valve and Magneto Tunneling Junction
碩士 === 國立中正大學 === 物理所 === 94 === Spin devices, which may contain Pseudo Spin Valve (PSV), spin transistor, or Magneto Tunneling Junction (MTJ) have been widely expected to play a central role in the future generation of spin technology such as nonvolatile memory, pick-up heads and magnetic sensors,...
Main Authors: | Wei-Chih Chien, 簡維志 |
---|---|
Other Authors: | Y. D. Yao |
Format: | Others |
Language: | zh-TW |
Published: |
2006
|
Online Access: | http://ndltd.ncl.edu.tw/handle/70256043110413116897 |
Similar Items
-
Magneto Impedance Behaviors of Pseudo spin Valve
by: Ruei-Feng Hung, et al.
Published: (2007) -
Study of Magneto Impedance for Magneto Resistive Memory and Tungsten Oxide for Resistive Memory
by: Chien, Wei-Chih, et al.
Published: (2010) -
The tunnel magneto-Seebeck effect in magnetic tunnel junctions
by: Walter, Marvin
Published: (2014) -
Magneto-Seebeck effect in magnetic tunnel junctions with perpendicular anisotropy
by: Keyu Ning, et al.
Published: (2017-01-01) -
Magneto-Seebeck effect in spin-valve with in-plane thermal gradient
by: S. Jain, et al.
Published: (2014-12-01)