Magneto Impedance Behaviors of Pseudo Spin Valve and Magneto Tunneling Junction

碩士 === 國立中正大學 === 物理所 === 94 === Spin devices, which may contain Pseudo Spin Valve (PSV), spin transistor, or Magneto Tunneling Junction (MTJ) have been widely expected to play a central role in the future generation of spin technology such as nonvolatile memory, pick-up heads and magnetic sensors,...

Full description

Bibliographic Details
Main Authors: Wei-Chih Chien, 簡維志
Other Authors: Y. D. Yao
Format: Others
Language:zh-TW
Published: 2006
Online Access:http://ndltd.ncl.edu.tw/handle/70256043110413116897

Similar Items