A Study of Dielectric Characteristics of Oxide Material on the Rare-earth Element Using Oxidational Method
博士 === 國防大學中正理工學院 === 國防科學研究所 === 94 === It has been years that in semiconductor integrated circuit (IC) manufacturing people have successfully used SiO2 as gate dielectric material in MOSFET and other related device. Recently, due to the improvement of semiconductor technique, the size of device h...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2006
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/24332184800174129926 |