Study on the AZO transparent conductive thin film by pulse DC magnetron sputtering

• Main Authors: Huang, Chieh-Chih, 黃皆智
• Other Authors: Hsieh, Li-Zen
• Format: Others
• Language: zh-TW
• Published: 2006
• Online Access: http://ndltd.ncl.edu.tw/handle/44586752359698755319

碩士 === 國防大學中正理工學院 === 電子工程研究所 === 94 === With the development of optical-electric industry, there are new materials that are developed out constantly. The transparent conductive oxide (TCO) thin film is one of them. TCO is broadly applied to LCD, PDP, FED, and LED. For the transparent conductive thin film, the ITO with ripe fabricated processes, good electrical and optical properties is used broadly by industry, then it has still some problems such as low stability to Hydrogen plasma and toxicity. The source shortage of the indium ore, therefore the price is rise crazily in recent years. The engineers are looking for materials that can substitute ITO. The AZO (Aluminum doped Zinc Oxide) has optical and electrical characteristics similar to ITO, ex. wide band-gap, no toxicity and low cost. The AZO is placed great expectations. For many deposited TCO thin film, the pulsed DC magnetron sputtering gets more and more attention in recent years, because it can control the arc and get higher efficiency. This study on characteristics of AZO thin film was completed by pulsed DC magnetron power technique with varying sputtering power, frequency and pulse width. We wish to get the optimal parameters to develop the transparent conductive thin film, which has low resistivity and high transmittance. In our results, we can get lower resitivity of 2.5×10-3 Ω cm and higher transmittance of 80 - 90 % in the visible wavelength by controlling suitable frequency and pulse width conditions.