| Summary: | 碩士 === 國防大學中正理工學院 === 兵器系統工程研究所 === 94 === This thesis probes into component characteristic of LC-tank on silicon. We accomplished the principal effects improving the performance of LC-tank by studying quality factor of spiral inductors and tuning range of MOS varactors. We studied quality factor and capacitances tuning range of MOS varactors. In the result of test keys study, the quality factor is higher when channel length or trench is shorter, and capacitances tuning range is narrower when array number is lesser. In the simulate discussions, when the gate area overlap the trench is smaller or trench depth is deeper, the parasitic capacitance reduces and the frequency tuning range of LC-tank increases.
We studied several inductance calculation algorithms, including Greenhouse and Jenei algorithm of physic-based and Modified Wheeler, Current Sheet and Monomial of fitting-based, then designed optimum geometry dimension for quality factor. The errors range less than 12.8% and 11.8% in square and octagon inductors. Beside, the parasitic capacitance of inductors increase when they are fabricated with higher dosed pattern ground shield. However, the change of parasitic capacitance doesn’t contribute to the performance improvements of inductors. In this thesis, we achieved LC-tank with frequency tuning range of 4.8GHz to 6.8GHz, which as broad band as 2GHz.
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