| Summary: | 碩士 === 大同大學 === 電機工程研究所 === 93 === The major objective of this thesis is to fabricate and study passive device of inductor using standard monolithic silicon processing technology. Radio frequency integrated circuit is a circuit that manages signals in wireless LAN. The inductors on chip are most important components, but its quality parameter is always not good enough. Quality parameter is an important factor for comparison of inductor performance. In this research, we discuss the four kinds of design parameter effect of inductors using this experimental method. The effect of turn number has most conspicuous influence to inductors, and after that are inner-dimension, track spacing and track width.
We finally take advantage of proposed differential symmetrical 10-sided polygonal spiral inductor to design a 5GHz U-NII dual-band frequency VCO which comply with IEEE 802.11a standard. The TSMC 0.18μm CMOS 1P6M process is adopted, and all circuit simulations are achieved by means of the ADS tool.
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