Growth and Characterization of Barium Titanate Thin Films on Oxide Electrode/Buffer Layer/Si by RF Magnetron Sputtering and Its Ferroelectric and Dielectric Application

• Main Authors: Yuan-sung Liang, 梁淵松
• Other Authors: Wen-ching Shih
• Format: Others
• Language: en_US
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/38998867088639570554

碩士 === 大同大學 === 光電工程研究所 === 93 === ABSTRACT Barium Titanate (BaTiO3) has excellent properties, including the ferroelectricity, piezoelectricity, electro-optic effect, acousto-optic effect and non-linear optic effect. It was one of the key materials in memory and integrated optics applications such as FeRAM, electro-optic modulation, optical switching et al.. In comparing with the bulk materials, thin films had several advantages such as small size, low cost, easy doping and multi-layer structure. Thus we hoped to deposit BaTiO3 thin film for further applications. We analyzed the crystal properties of MgO and SrTiO3(STO) buffer layer deposited on Si(100) substrate and BaTiO3 thin film prepared on MgO(100) single crystal substrate and Si(100) with MgO and SrTiO3 buffer layer substrate. Following, we analyzed the crystal properties and resistivity of La0.5Sr0.5CoO3 (LSCO) and LaNiO3(LNO) electrode. Finally, the MIM capacitor structures such as Pt/BaTiO3/LSCO/MgO/Si(100), Pt/BaTiO3/LNO/MgO/Si(100), Pt/BaTiO3/LSCO/STO/MgO/Si(100), Pt/BaTiO3/LNO/STO/MgO/Si(100) and traditional Pt/BaTiO3/Pt/Ti/SiO2/Si(100) were prepared by pulse laser deposition and sputtering. We discussed the ferroelectric and dielectric characterization difference due to the effects of different structures, electrode materials and process temperature which we chose.