STUDY ON THE SYNTHESIS OF POLYMER WITH TERT-BUTYL GROUP AND THEIR CHARACTERS ON THE CHEMICALLY AMPLIFIED POSITIVE PHOTORESIST
碩士 === 大同大學 === 化學工程學系(所) === 93 === In this investigation, monomer with high thermal stability, N-(4-carboxy-phenyl) maleimide (CPMI), was synthesized from the maleic anhydride , ρ-aminobenzic acid. With another monomer, tert-Butyl methacrylate, free radical copolymerization of this two monomer, w...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/93208359973496377608 |
| Summary: | 碩士 === 大同大學 === 化學工程學系(所) === 93 === In this investigation, monomer with high thermal stability, N-(4-carboxy-phenyl) maleimide (CPMI), was synthesized from the maleic anhydride , ρ-aminobenzic acid. With another monomer, tert-Butyl methacrylate, free radical copolymerization of this two monomer, were performed at 60~70℃ in the presence of azobisisobutyronitrile (AIBN) as an initiator in 12ml tetrahydrofuran (THF).
This photoresist is chemical amplified photoresist, exposured under Deep-UV (248nm) and photo acid generator produce acid proton. During post exposure bake (PEB) process chemical amplified achieved and the photo acid generator (PAG) is 15wt% relative copolymer. Using 20wt% photoresist coated and 1~2μm film thickness obtained. Develop in 0.015wt% Na2CO3 the positive pattern obtained. From exposure curve that chemical amplified photoresist need less exposure dose(825 mJ/cm2) relative traditional photoresist and achieve the effect of exposure.
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