Combined GaN with Silicon Wafer by Indirect Bonding at Low Temperature
碩士 === 國立臺北科技大學 === 光電工程系所 === 93 === The indirect bonding is investigated to bond wafers in various environment with metal interface. By altering parameters, such as annealing time and bonding time. It is found that the effect of wafer bonding varies in different conditions. Two wafer pairs, silico...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/pgjmdw |