Combined GaN with Silicon Wafer by Indirect Bonding at Low Temperature

• Main Authors: Shih-Fan Chang, 張詩汎
• Other Authors: 陳隆建
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/pgjmdw

碩士 === 國立臺北科技大學 === 光電工程系所 === 93 === The indirect bonding is investigated to bond wafers in various environment with metal interface. By altering parameters, such as annealing time and bonding time. It is found that the effect of wafer bonding varies in different conditions. Two wafer pairs, silicon pair and GaN-silicon pair respectively, are used as our samples. 1000 Å Ti is deposited on the pairs by E-gun evaporation which follows interface layer deposition. Sn-Au alloy, Al and Au with thickness of 5000~6000 Å are chosen for interfaces, the pair is put in IPA for prebonding to protect wafer from air. Then chip wafers with steel bonding appliance and send into the furnace. the wafer bonding is achieved by pressure and heating. The cross-section of bonded pairs is observed with SEM. From the images, it is found that Au is good interface layer for wafer bonding and great bonding effect could be obtained under 450℃ annealing for 60 minutes.