Design and Fabrication of 2.4 GHz ISM and 28 GHz Ka Band Low Noise Amplifiers
碩士 === 南台科技大學 === 電子工程系 === 93 === The thesis proposes low-noise amplifiers (LNAs). For the 2.4 GHz ISM-band, the bipolar junction transistors (BJTs) are used to design single- and two- stage LNAs. The 2.4 GHz LNAs are implemented on 1.6 mm-thick FR4 substrates. For the 28 GHz Ka-band, the two-stage...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/01601781261310283611 |
| Summary: | 碩士 === 南台科技大學 === 電子工程系 === 93 === The thesis proposes low-noise amplifiers (LNAs). For the 2.4 GHz ISM-band, the bipolar junction transistors (BJTs) are used to design single- and two- stage LNAs. The 2.4 GHz LNAs are implemented on 1.6 mm-thick FR4 substrates. For the 28 GHz Ka-band, the two-stage LNAs are implemented in 0.15 μm GaAs/InGaAs pseudomorphic high-electron mobility transistors (PHEMTs) processes. The circuit is used in a multi-function transmit/receive (T/R) module for local multipoint distribution system (LMDS). The 28 GHz LNAs exhibit a gain of 21 dB, a noise figure less than 1.5 dB in the 27.5-29.5 GHz range. The chip size of this MMIC LNA is 1.5x1 mm2.
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