| Summary: | 碩士 === 中國文化大學 === 材料科學與製造研究所 === 93 === The TAGS system thermoelectric material AgGemSbTem+2 was composed with element silver, germanium, antimony, tellurium. In this study, we choose element lead to replace germanium which in the thermoelectric material AgGemSbTem+2 and manufacture n-type semiconductor thermoelectric material. The ZT value (Figure of Merit) of this material was fine, when it was under the temperature 600 K. In this study AgPbmSbTem+2 thermoelectric materials were prepared by Vertical Bridgman Method and Powder Metallurgy Method for different mole percentage and sintering temperature. The temperature dependence of the Seebeck coefficient, electric conductivity and thermal conductivity of AgPbmSbTem+2 thermoelectric materials were measured between 300K and 600K. A detailed characterization program use X-ray diffraction, EDS and SEM to determine the structure and composition. When the value of AgPbmSbTem+2 alloy that prepared by Vertical Bridgman Method was 10, 14, 18, the figure of Merit reach to 0.320、0.397 and 0.487 at 700K. By the Powder Metallurgy Method, we measured a fine value of AgPbmSbTem+2 alloy when the m=18, which was sintered at 550℃.The figure of Merit reach to 0.563 at the temperature 700K. In this study, not only has a discussion in the relation of temperature and crystal growth but also assay and introduce the influence with the different sintering temperature and the doping mole percentage.
|
|---|
