| Summary: | 碩士 === 國立虎尾科技大學 === 光電與材料科技研究所 === 93 === Improvement electrical properties of transparent and conductive by way of indium tin oxide and zinc oxide multilayer structure had been investigated. Shown by the result of study, utilize indium tin oxide films and zinc oxide films prepared by transparent and conductive of multilayer structure, the resistivity obtained improved (about 1.55×10-3 Ω-cm) with indium tin oxide films (about 1.96×10-3 Ω-cm) to compare. Therefore, by the experimental result propose it by way of ratio frequency cosputtered mold, at the same time to indium tin oxide and zinc oxide two kinds of materials prepared high electrical properties transparent conductive films by cosputtered system at room temperature.
The transparent electrode obtained from co-sputtering system with ITO and ZnO targets had been investigated. The resistivity was significant improved with an additional co-sputtered ZnO target compared to the individual ITO film. A lowest resistivity transparent film of 3×10-4 Ω-cm was achieved at room temperature as the rf power of co-sputtering system. The transparent conductive films prepared by cosputtered. Show via observation of XRD, the transparent conductive films was amorphous at the optimum condition. The surface roughness of these co-sputtered films (1.18 nm) was also superior to individual ITO films (about 2.89 nm). The average transmittance obtained from these cosputtered films in the visible spectrum was over 80%.
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