| Summary: | 博士 === 國立臺灣科技大學 === 電子工程系 === 93 === Abstract
In this thesis, a new device structure is presented for a silicon light emitting device. The device is operating at different bias condition and with higher efficiency than general silicon light emitters. It has the advantages of low operating-voltage, low power-dissipation, high external quantum efficiency, and high power transfer efficiency. Particularly, the operating-voltage is only around 1 V, which is compatible with other circuits on the same chip.
In order to clarify the mechanisms of light emission in silicon, many similar structures are designed for comparisons. We find that the light intensity can be enhanced by current density and the light spectrum is influenced by the distance between p+ and n+ regions. A MOS diode is also investigated for its current components, emitted light power, and light spectrum. Although the MOS diode has different structure and current components, its light spectrum is similar to that of pn diode. Since the current components in MOS diode are all concerned with surface or interface, we suggest that the light emission in silicon is a phonon-assisted band-to-band transition cooperated by momentum spread at interface.
The silicon light emitting device also can be used as a photoreceiver under reverse bias, receiving the light emitted from the other one. A DC chip-to-chip alignment is presented using only a voltmeter, and a free-space chip-to-chip interconnection is achieved. Finally, all-Si integrated circuits for light emitter/receiver are presented, using a MUX/DEMUX set for high speed signal transmission.
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