| Summary: | 碩士 === 國立臺灣科技大學 === 電子工程系 === 93 === In recent years, with the rapid development of wireless communication as well as the maturation of semi-conductor skills and industries, customer demands for modern wireless products have greatly increased. Driven by the consumer market for products that are light, thin, short, small and low price, the development of Radio Frequency Integrated Circuit is accelerated. As a result, the provision of highly integration through the utilization of CMOS process is now becoming a major issue. Through the comparison between GaAs and CMOS, we are able to understand their differences in processing and accordingly develop methods to deal with related problems.
In this paper, we study the transmission line effect on high frequency circuit in the TSMC 0.18 um 1P6M CMOS process, and the excellent observation condition of low-noise amplifier is used to design low, medium and high bandwidth low-noise amplifier. In addition, Microstrip line is added specially for comparison purposes. It is mainly for demonstrating the necessity of observing various effects on the connection of various devices. As stated in Chapter 1, GaAs works with isolated substrate and good high-frequency characteristics. For that reason, it is widely applied in microwave. That is the application of Microstrip line in GaAs is even indispensable. Therefore, if the CMOS process is required to be more advanced in the future, the connecting line between devices shall also be highly considered. This is the key point in this paper.
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