The study of copper-silica nanocomposite films

碩士 === 國立臺灣科技大學 === 材料科技研究所 === 93 === This thesis uses the magnetron co-sputter to deposit Cu-SiO2 composite films, and probe electricity in the composite films of different copper content. The first part of experiment studies composition and structure of the as-deposited and annealed Cu-SiO2 films...

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Main Authors: CHEN-JUI WANG, 王貞芮
Other Authors: Shyan-kay Jou
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/54097224380372810920
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spelling ndltd-TW-093NTUST1590042015-10-13T15:28:57Z http://ndltd.ncl.edu.tw/handle/54097224380372810920 The study of copper-silica nanocomposite films 添加銅之二氧化矽複合薄膜之研究 CHEN-JUI WANG 王貞芮 碩士 國立臺灣科技大學 材料科技研究所 93 This thesis uses the magnetron co-sputter to deposit Cu-SiO2 composite films, and probe electricity in the composite films of different copper content. The first part of experiment studies composition and structure of the as-deposited and annealed Cu-SiO2 films, using XPS. The second part of experiment studies the change of crystallite size in the Cu-SiO2 films, using XRD, TEM, and UV-Visible spectroscopy. The third part of experiment studies electrical properties of the Cu-SiO2 films using Ti/ Cu-SiO2/Ti sandwich structure. Both Cu and Cu2O crystallite appear in the Cu-SiO2 nano-composite films. Crystallite size increases with Cu content, annealing temperatures and time. However, some Cu segregate to surface of the nano-composite films with high concentration Cu. Electrical properties of the Cu-SiO2 films are affected by both the Cu concentration and the annealing conditions. Breakdown voltages of the Cu-SiO2 films decrease but the leakage currents increase while Cu content increases. The Cu-SiO2 films become conductive after the breakdown. Shyan-kay Jou 周賢鎧 2005 學位論文 ; thesis 82 zh-TW
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language zh-TW
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description 碩士 === 國立臺灣科技大學 === 材料科技研究所 === 93 === This thesis uses the magnetron co-sputter to deposit Cu-SiO2 composite films, and probe electricity in the composite films of different copper content. The first part of experiment studies composition and structure of the as-deposited and annealed Cu-SiO2 films, using XPS. The second part of experiment studies the change of crystallite size in the Cu-SiO2 films, using XRD, TEM, and UV-Visible spectroscopy. The third part of experiment studies electrical properties of the Cu-SiO2 films using Ti/ Cu-SiO2/Ti sandwich structure. Both Cu and Cu2O crystallite appear in the Cu-SiO2 nano-composite films. Crystallite size increases with Cu content, annealing temperatures and time. However, some Cu segregate to surface of the nano-composite films with high concentration Cu. Electrical properties of the Cu-SiO2 films are affected by both the Cu concentration and the annealing conditions. Breakdown voltages of the Cu-SiO2 films decrease but the leakage currents increase while Cu content increases. The Cu-SiO2 films become conductive after the breakdown.
author2 Shyan-kay Jou
author_facet Shyan-kay Jou
CHEN-JUI WANG
王貞芮
author CHEN-JUI WANG
王貞芮
spellingShingle CHEN-JUI WANG
王貞芮
The study of copper-silica nanocomposite films
author_sort CHEN-JUI WANG
title The study of copper-silica nanocomposite films
title_short The study of copper-silica nanocomposite films
title_full The study of copper-silica nanocomposite films
title_fullStr The study of copper-silica nanocomposite films
title_full_unstemmed The study of copper-silica nanocomposite films
title_sort study of copper-silica nanocomposite films
publishDate 2005
url http://ndltd.ncl.edu.tw/handle/54097224380372810920
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