The study of copper-silica nanocomposite films
碩士 === 國立臺灣科技大學 === 材料科技研究所 === 93 === This thesis uses the magnetron co-sputter to deposit Cu-SiO2 composite films, and probe electricity in the composite films of different copper content. The first part of experiment studies composition and structure of the as-deposited and annealed Cu-SiO2 films...
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ndltd-TW-093NTUST1590042015-10-13T15:28:57Z http://ndltd.ncl.edu.tw/handle/54097224380372810920 The study of copper-silica nanocomposite films 添加銅之二氧化矽複合薄膜之研究 CHEN-JUI WANG 王貞芮 碩士 國立臺灣科技大學 材料科技研究所 93 This thesis uses the magnetron co-sputter to deposit Cu-SiO2 composite films, and probe electricity in the composite films of different copper content. The first part of experiment studies composition and structure of the as-deposited and annealed Cu-SiO2 films, using XPS. The second part of experiment studies the change of crystallite size in the Cu-SiO2 films, using XRD, TEM, and UV-Visible spectroscopy. The third part of experiment studies electrical properties of the Cu-SiO2 films using Ti/ Cu-SiO2/Ti sandwich structure. Both Cu and Cu2O crystallite appear in the Cu-SiO2 nano-composite films. Crystallite size increases with Cu content, annealing temperatures and time. However, some Cu segregate to surface of the nano-composite films with high concentration Cu. Electrical properties of the Cu-SiO2 films are affected by both the Cu concentration and the annealing conditions. Breakdown voltages of the Cu-SiO2 films decrease but the leakage currents increase while Cu content increases. The Cu-SiO2 films become conductive after the breakdown. Shyan-kay Jou 周賢鎧 2005 學位論文 ; thesis 82 zh-TW |
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碩士 === 國立臺灣科技大學 === 材料科技研究所 === 93 === This thesis uses the magnetron co-sputter to deposit Cu-SiO2 composite films, and probe electricity in the composite films of different copper content. The first part of experiment studies composition and structure of the as-deposited and annealed Cu-SiO2 films, using XPS. The second part of experiment studies the change of crystallite size in the Cu-SiO2 films, using XRD, TEM, and UV-Visible spectroscopy. The third part of experiment studies electrical properties of the Cu-SiO2 films using Ti/ Cu-SiO2/Ti sandwich structure.
Both Cu and Cu2O crystallite appear in the Cu-SiO2 nano-composite films. Crystallite size increases with Cu content, annealing temperatures and time. However, some Cu segregate to surface of the nano-composite films with high concentration Cu. Electrical properties of the Cu-SiO2 films are affected by both the Cu concentration and the annealing conditions. Breakdown voltages of the Cu-SiO2 films decrease but the leakage currents increase while Cu content increases. The Cu-SiO2 films become conductive after the breakdown.
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author2 |
Shyan-kay Jou |
author_facet |
Shyan-kay Jou CHEN-JUI WANG 王貞芮 |
author |
CHEN-JUI WANG 王貞芮 |
spellingShingle |
CHEN-JUI WANG 王貞芮 The study of copper-silica nanocomposite films |
author_sort |
CHEN-JUI WANG |
title |
The study of copper-silica nanocomposite films |
title_short |
The study of copper-silica nanocomposite films |
title_full |
The study of copper-silica nanocomposite films |
title_fullStr |
The study of copper-silica nanocomposite films |
title_full_unstemmed |
The study of copper-silica nanocomposite films |
title_sort |
study of copper-silica nanocomposite films |
publishDate |
2005 |
url |
http://ndltd.ncl.edu.tw/handle/54097224380372810920 |
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