| Summary: | 碩士 === 國立臺灣科技大學 === 材料科技研究所 === 93 === This thesis uses the magnetron co-sputter to deposit Cu-SiO2 composite films, and probe electricity in the composite films of different copper content. The first part of experiment studies composition and structure of the as-deposited and annealed Cu-SiO2 films, using XPS. The second part of experiment studies the change of crystallite size in the Cu-SiO2 films, using XRD, TEM, and UV-Visible spectroscopy. The third part of experiment studies electrical properties of the Cu-SiO2 films using Ti/ Cu-SiO2/Ti sandwich structure.
Both Cu and Cu2O crystallite appear in the Cu-SiO2 nano-composite films. Crystallite size increases with Cu content, annealing temperatures and time. However, some Cu segregate to surface of the nano-composite films with high concentration Cu. Electrical properties of the Cu-SiO2 films are affected by both the Cu concentration and the annealing conditions. Breakdown voltages of the Cu-SiO2 films decrease but the leakage currents increase while Cu content increases. The Cu-SiO2 films become conductive after the breakdown.
|
|---|
