Analysis of Thermal Radiation in a Rapid Thermal Processor Using Ray Tracing
碩士 === 國立臺灣大學 === 應用力學研究所 === 93 === ABSTRACT Because the lamps can radiate high intensity of thermal radiation onto a wafer within a short time, a RTP features rapid heating, low thermal budget, and low dopant diffusion in semiconductor manufacturing. As the semiconductor industry progresses to na...
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| Format: | Others |
| Language: | zh-TW |
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2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/27713482579809026800 |
| Summary: | 碩士 === 國立臺灣大學 === 應用力學研究所 === 93 === ABSTRACT
Because the lamps can radiate high intensity of thermal radiation onto a wafer within a short time, a RTP features rapid heating, low thermal budget, and low dopant diffusion in semiconductor manufacturing. As the semiconductor industry progresses to nano size and large size of wafer, the RTP attracts varieties of applications. The most often encountered problem in RTP is the temperature nonuniformity in a wafer during processing which may cause major defects of a wafer.
This thesis numerically investigates thermal radiation in a horizontal RTP with negligible conduction and convection in the chamber. Ray tracing technique is employed to compute incident radiation of a wafer during processing. Temperature nonuniformity of a wafer is explored by adjusting locations of lamps. Flat mirrors are positioned in various configurations in order to reduce radiant losses around the edge of a wafer.
Finally, the shapes and locations of the lamp reflector are studied intending to increase incident radiation and uniformity of a wafer. Numerical computations provide a valuable tool for the design and improvement performance of a RTP.
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