Characteristic of 10 periods SLS LED with Si0.8Ge0.2 capping layer for 1.3 ~1.5 um wavelength
碩士 === 國立臺灣大學 === 電子工程學研究所 === 93 === The advantage of the optoelectronic component of silicon germanium is fully compatible with the Si-based microelectronic chips. In addition, the progress of the growth techniques for quantum heterojunction structure is in advanced. So the heterojunction structur...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | en_US |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/64331038214875194231 |