The Low Temperature a-SiNx Passivation Films and The Uniform Poly-Si Grain Thin Film Transistors with Application to Organic Light Emitting Diode
碩士 === 國立臺灣大學 === 電子工程學研究所 === 93 === Two important problems concerning the active matrix organic light emitting diode (AMOLED) are considered. The first is the passivation layer to protect the top emitting OLED. The second is to obtain poly-Si thin film transistor with better uniformity and good pe...
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/24776075772334296252 |
| Summary: | 碩士 === 國立臺灣大學 === 電子工程學研究所 === 93 === Two important problems concerning the active matrix organic light emitting diode (AMOLED) are considered. The first is the passivation layer to protect the top emitting OLED. The second is to obtain poly-Si thin film transistor with better uniformity and good performance. The a-SiNx film with high optical gap and impermeability fabricated by plasma enhanced chemical vapor deposition (PECVD) has been chosen as the passivation layer. The optimum ratio of reaction gas is SiH4:NH3:N2 = 10:3:197 sccm. The optical gap is higher than 3 eV and reaction temperature could be as low as 70℃ and the film doesn’t show any degradation after removing from the growth chamber for 5000 hours. A new method to prepare uniform and large grain size poly-Si was discovered. The uniformity of the thin film transistor fabricated by excimer laser annealing (ELA) of amorphous Si with metallic (Cr/Al) photonic crystal structure has been substantially improved. The best on/off current ratio could reach 8 order of magnitude and the mobility could attain 354 cm2/V-sec. After comparing the Cr/Al with Al photonic crystal pads, the Cr could efficiently impede the diffusion of Al into Si.
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