Optical Properties of InGaN Quantum Dots Grown on SiNx Nano Masks

• Main Authors: Liang-Liang Huang, 黃亮喨
• Other Authors: 陳永芳
• Format: Others
• Language: en_US
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/99059669475162167757

碩士 === 國立臺灣大學 === 物理研究所 === 93 === Abstract In this thesis we report a detailed study on the structural and optical properties of InGaN/GaN quantum dots. Quite interesting results have been obtained from our studies which should be very useful for our understanding and application of these materials. I. Effect of SiNx Nano Mask on Optical Properties of InGaN Quantum Dots Optical properties of InGaN quantum dots have been investigated by photoluminescence and photoluminescence exaltation measurements. We report a high efficiency of radiative recombination in ultra-high-density InGaN quantum dots due to quantum confinement effects. The photoluminescence spectra of InGaN quantum dots containing several fine structures are attributed to different families of quantum dots sizes. Also, we point out that the piezoelectric effects do not play a significant role in our samples. In addition, we can clearly identify the emission from InGaN quantum dots and GaN defect in photoluminescence excitation experiments. II. Dependence of Optical Properties of InGaN Quantum Dots on Duration Time of SiNx Nano Mask Photoluminescence and photoluminescence exaltation measurements have been employed to study dependence of optical properties in InGaN quantum dots on duration time of SiNx nano mask. We report that the average height of the quantum dots increases with the SiNx treatment time. The wavelength of photoluminescence emission change with different quantum dots sizes due to quantum confinement effects. The exciton binding energy of InGaN quantum dots shows that it decreases with increasing QD size as one should expect. We point out a possibility to fabricate full color high-brightness light emitting diodes based on InGaN quantum dots by controlling duration time of SiNx treatment.