| Summary: | 碩士 === 國立臺灣大學 === 光電工程學研究所 === 93 === Because of similar properties to semiconductor, easy fabrication process, lower cost, large viewing angle, lower power consumption, and high brightness, OLEDs become scientific and commercial significant and gradually played an important role in display technology. In order to achieve full color display and lighting applications, numerous research groups focus on visible light range and are devoted to short wavelength emitting organic materials in recent years. Fluorene-based polymers possess thermal stability and high PL quantum yields. Besides, used in OLEDs are found giving high brightness, low operating voltage. In this thesis, we successfully investigate the occupied electronic structure and energy levels of the T-homologous oligofluorenes via synchrotron radiation photoemission spectroscopy. The basic properties of T-homologous oligofluorenes are measured and chemical reaction at the interfaces formed by T-homologous oligofluorenes and LiF is also studied and we observed that charge transfer and n-type doping effect occurs when LiF is deposited on T-homologous oligofluorenes. In addition, we introduce the principle of IPES and the design of photon detector and measure the spectrum of unoccupied states above Fermi level via IPES. We try to combination of PES and IPES spectra the whole electronic structure and the bad gap is determined.
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