Probing the Thin Film via Terahertz Spectroscopic Technique
碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 93 === We have determined the complex conductivity and the refractive indices of GaN and InGaN/GaN MQWs LED by terahertz time-domain spectroscopy. Frequency dependent electron dynamics, power absorption and dispersion are obtained over the frequency range from 0.1 to...
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/85880935691781097010 |
| Summary: | 碩士 === 國立臺灣海洋大學 === 光電科學研究所 === 93 === We have determined the complex conductivity and the refractive indices of GaN and InGaN/GaN MQWs LED by terahertz time-domain spectroscopy. Frequency dependent electron dynamics, power absorption and dispersion are obtained over the frequency range from 0.1 to 3.0THz. The index of refraction of the GaN film varies from 10.0 to 2.6. The power absorption of the GaN film varies from 62mm-1 to 230mm-1.The real conductivity of the GaN film varies from 19.2/Ωcm to 13.4/Ωcm. The transmission measurements of the GaN film are fit by simple Drude model. We obtain the plasma frequency and the carrier damping rate of the GaN film are 11.64THz and 3.92THz, respectively. The index of refraction of the InGaN/GaN MQWs LED varies from 11.0 to 2.9. The power absorption of the InGaN/GaN MQWs LED varies from 65mm-1 to 252mm-1. The real conductivity of the InGaN/GaN MQWs LED varies from 23.2/Ωcm to 12.4/Ωcm. The transmission measurements of the InGaN/GaN MQWs LED are fit by simple Drude model. We obtain the plasma frequency and the carrier damping rate of the InGaN/GaN MQWs LED are 11.31THz and 3.08THz, respectively.
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