| Summary: | 碩士 === 國立臺灣海洋大學 === 電機工程學系 === 93 === At first, we investigated the effect of processing conditions on the characteristics of Indium Tin Oxide (ITO). In this thesis, oxygen flow and Tin doping content were the main variables. The experimental results showed that: As the oxygen flow was increased to 16sccm, and utilized a sintered ITO target (its ratio of In2O3 to SnO2 was 98 to 2) during the film deposition procedure, the work function can increase for more than 0.3 eV, but its resistivity increased 3 orders.
In order to apply our high work function ITO to Organic Light Emitting Diode (OLED), we deposited untrathin high work function ITO (the thickness of this high work function ITO was less than 10nm) on the low resistivity ITO(the resistivity of this ITO was 1.1×10-3Ω.cm), and used this double layer ITO as anode of OLED. The structure of OLED were: glass substrate (0.7mm) /ITO(180nm) / NPB(40nm) /Alq3(60nm) /LiF(0.5nm) /Al(80nm). The results showed that : depositing ultrathin high work function ITO on low resistivity ITO, can improve the luminance efficiency. The maximum improvement was 24%.
We also doped different kind of impurity (Zr and V) into ITO thin films. The experimental results showed that: As we doping 12.25%Zr into ITO films, the work function of ITO can be increased about 0.5eV, but its resistivity increased for more than 4 orders.
In order to apply our high work function ITO to OLED, we deposited untrathin high work function ITO (the thickness of this high work function ITO was less than 10nm) on the low resistivity ITO(the resistivity of this ITO was 2×10-4Ω.cm), and used this double layer ITO as anode of OLED. The structure of OLED were: glass (0.7mm) /ITO(160nm) /NPB(40nm) /Alq3(40nm) / Mg:Ag(40nm). The results showed that : ITO anode with higher work function , can improve the improve the luminance efficiency. The maximum improvement was 18%.
Key words: Indium Tin Oxide(ITO)、work function、Organic Light
Emitting Diode (OLED)
|
|---|
