Fabrication and analysis of GaN micro LED
碩士 === 國立清華大學 === 電子工程研究所 === 93 === Because of the breakthrough of epitaxy of GaN based LEDs, and due to it`s high band gap characteristics and variation by changing the concentration of Al, In and Ga, it becomes the most popular material for UV to green light LEDs. Recently, the efficiency of blue...
| Main Authors: | , |
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| Format: | Others |
| Language: | en_US |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/22210375409322624970 |