| Summary: | 碩士 === 國立清華大學 === 電子工程研究所 === 93 === The purpose of this study was the fabrication and electrical measurement of copper nanowires. The patterns of copper nanowires were defined by electron beam lithography on amorphous-silicon. Then copper nanowires formed by replacement method in mixture solution of cupric sulfate (CuSO4•5H2O) with HF. After the fabrication of copper nanowire, we measured the electrical characteristic.
At first, the C60 mix with electron beam resist DSE1010 to make up the nanocomposite resist. The patterns were exposed with 40nm, 60nm, 80nm and 100nm iso-line with dose 5~14.75 μC/cm2. Then development time with 60s, 90s and 150s and concentration of C60 in nanocomposite resist with 0.015%, 0.025% and 0.035% were used to modify the exposure results. Then we found the concentration of C60 with 0.015% and development time 150s could fine define line width about 90nm. Among different concentration of HF in replacement solution and replacement time, which are 70c.c./L with 10s, 70c.c./L with 7s and 60c.c./L with 7s, the 60c.c/L with 7s gave the proper copper nanowire with width 92nm and thickness 62nm. There were two kinds of electrical measurement methods used. First kind was measured on Conductive mode of Atomic Force Microscopic(C-AFM). After the copper nanowires were fabricated by replacement method, copper film with thickness 4000Å was sputtered on one end. Then we got the I-V curve by used C-AFM. The second one was used probe station with HP4156A to measure the electrical characteristic. After the copper nanowires were fabricated, the metal mask was used to define the electrode pad during the copper film sputtered on it. The four point measurement method was used on probe station to avoid the contact resistance. Then, these two different methods were discussed to compare the advantages and disadvantages at the end.
|
|---|
