The characteristics of Y1-xA1xO3(x=0~0.58)thin films for high-k gate dielectric applications

碩士 === 國立清華大學 === 材料科學工程學系 === 93 ===

Bibliographic Details
Main Author: 姚富淵
Other Authors: 甘炯耀
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/70217489808515271799
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spelling ndltd-TW-093NTHU51590592016-06-06T04:11:34Z http://ndltd.ncl.edu.tw/handle/70217489808515271799 The characteristics of Y1-xA1xO3(x=0~0.58)thin films for high-k gate dielectric applications 應用於高介電閘極氧化層之Y1-XAlXO3(X=0∼0.58)薄膜特性探討 姚富淵 碩士 國立清華大學 材料科學工程學系 93 甘炯耀 2005 學位論文 ; thesis 0 zh-TW
collection NDLTD
language zh-TW
format Others
sources NDLTD
description 碩士 === 國立清華大學 === 材料科學工程學系 === 93 ===
author2 甘炯耀
author_facet 甘炯耀
姚富淵
author 姚富淵
spellingShingle 姚富淵
The characteristics of Y1-xA1xO3(x=0~0.58)thin films for high-k gate dielectric applications
author_sort 姚富淵
title The characteristics of Y1-xA1xO3(x=0~0.58)thin films for high-k gate dielectric applications
title_short The characteristics of Y1-xA1xO3(x=0~0.58)thin films for high-k gate dielectric applications
title_full The characteristics of Y1-xA1xO3(x=0~0.58)thin films for high-k gate dielectric applications
title_fullStr The characteristics of Y1-xA1xO3(x=0~0.58)thin films for high-k gate dielectric applications
title_full_unstemmed The characteristics of Y1-xA1xO3(x=0~0.58)thin films for high-k gate dielectric applications
title_sort characteristics of y1-xa1xo3(x=0~0.58)thin films for high-k gate dielectric applications
publishDate 2005
url http://ndltd.ncl.edu.tw/handle/70217489808515271799
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