The Study of FeRAM Devices using BZT Ferroelectric Thin Film Prepared by the RF Magnetron Sputtering Process
碩士 === 國立中山大學 === 電機工程學系研究所 === 93 === In this study, the reactive rf magnetron sputtering was used to deposit Ba(Ti0.9,Zr0.1)O3 (BZT) ferroelectric thin films on Pt/SiO2/Si and SiO2/Si substrates, and MFMIS and MFIS structures are fabricated. The effects of various sputtering parameters on the char...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
|
| Online Access: | http://ndltd.ncl.edu.tw/handle/44605465002014992507 |