The Study of FeRAM Devices using BZT Ferroelectric Thin Film Prepared by the RF Magnetron Sputtering Process

• Main Authors: Lien-Hsiang Chen, 陳聯祥
• Other Authors: Ying-Chung Chen
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/44605465002014992507

碩士 === 國立中山大學 === 電機工程學系研究所 === 93 === In this study, the reactive rf magnetron sputtering was used to deposit Ba(Ti0.9,Zr0.1)O3 (BZT) ferroelectric thin films on Pt/SiO2/Si and SiO2/Si substrates, and MFMIS and MFIS structures are fabricated. The effects of various sputtering parameters on the characteristics of thin films, such as the oxygen concentrations, rf power and deposition time are discussed. The physical characteristics of BZT thin films were obtained by the XRD pattern and AFM morphology. The variations of crystallization and surface roughness of thin films were discussed. The electrical properties of BZT thin films deposited under various sputtering parameters are measured by the HP4284A and HP4156C. From the experimental results obtained, the optimal dielectric constant and leakage current density were 197 and 1.41×10-7A/cm2, respectively, under the applied electrical field of 0.5 MV/cm. In addition, the coercive field and remanent polarization were 30 kV/cm and 7 μC/cm2 from the P-E curves, respectively. In addition, the electrical characteristics of MFMIS and MFIS structures are discussed. Besides, the memory window and leakage current density of thin films deposited at various sputtering parameters on MFIS structure are also discussed.