| Summary: | 碩士 === 國立中山大學 === 電機工程學系研究所 === 93 === Any object can emit infrared radiation if their temperature higher than 0K.Because of this,the photodetectors for infrared radition is very important in application. First,this paper will introduce the kinds and properties of infrared photodetectors but most important is the quantum dot infrared photodetectors.In second chapter,we use the basic physic concepts and mathematical equations to infer the photocurrent and dark current formula. According to the formula,we can see the relationship between current and quantum dot density,bias,donorconcentration,
Temperature. After we get the relationship,we can discuss the detectivity,noise properties, optical gain responstivity, differential photoconductivity. According to our research,the electron will be heated at very high ,bias and make the photoconductivity fairly smooth.Moreover,an increase in the effective temperature can result in the occurrence of the voltage range,where differential photoconductivity, is negative. It is important for a infrared photodetector to have high responsivity,detectivity,high working temperature,low dark current and low noise.Excepting this,to comprise a best infrared photodetector must have a good control on growth condition. Because of this,this paper will discuss the relationship between quantum dot and temperature,GRI time, growth thickness,deposited QD material.Finally,this paper find the best growth condition to form a quantum dot infrared photodetector.
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