The Development of New Layered Perovskite Thin Films with Improved Ferroelectric Fatigue Resistance
碩士 === 國立東華大學 === 材料科學與工程學系 === 93 === Ferroelectric thin films of bismuth-layered perovskite family, e.g. Bi4Ti3O12 (BIT), due to its excellent fatigue endurance have attracted the great attentions of many scientists. (Bi,La)4Ti3O12 (BLnT) has been recently considered as one of the most promising m...
| Main Authors: | , |
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| Other Authors: | |
| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/17191655722546118095 |