Preparation and Ferroelectricity of multi-doped Bi4Ti3O12 thin films grown by Radio-Frequency Sputtering

碩士 === 國立東華大學 === 材料科學與工程學系 === 93 === Abstract The Bi3.15Nd0.85Ti3O12 (BNT) ferroelectric thin film is one of the most developed ferroelectric materials for the nonvolatile ferroelectric random acess memories. In this study, the cosubstitution of A-site Na+ acceptor/B-site Ta5+ donor is incorpora...

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Bibliographic Details
Main Authors: Ping-Chen Chih, 池秉貞
Other Authors: Dong-Hau Kuo
Format: Others
Language:zh-TW
Published: 2005
Online Access:http://ndltd.ncl.edu.tw/handle/15521343243006764841

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