Preparation and Ferroelectricity of multi-doped Bi4Ti3O12 thin films grown by Radio-Frequency Sputtering
碩士 === 國立東華大學 === 材料科學與工程學系 === 93 === Abstract The Bi3.15Nd0.85Ti3O12 (BNT) ferroelectric thin film is one of the most developed ferroelectric materials for the nonvolatile ferroelectric random acess memories. In this study, the cosubstitution of A-site Na+ acceptor/B-site Ta5+ donor is incorpora...
| Main Authors: | , |
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| Format: | Others |
| Language: | zh-TW |
| Published: |
2005
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| Online Access: | http://ndltd.ncl.edu.tw/handle/15521343243006764841 |