Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications
碩士 === 國立中央大學 === 通訊工程研究所 === 93 === Title:Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications National Central University Department of Communication Engineering Student:Li-Chih Pai Advisor:Dr. Hwann-Kaeo Chiou Abstract Millimet...
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ndltd-TW-093NCU056500442015-10-13T11:53:59Z http://ndltd.ncl.edu.tw/handle/71608071812983031188 Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications 覆晶式Ka頻段超外差發射機前端電路之研製 Li-Chih Pai 白禮智 碩士 國立中央大學 通訊工程研究所 93 Title:Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications National Central University Department of Communication Engineering Student:Li-Chih Pai Advisor:Dr. Hwann-Kaeo Chiou Abstract Millimeter-wave flip-chip RF front-end transmitter circuits design are the main research of this thesis, which apply to Ka band local multipoint distribution service(LMDS). These Ka band circuits are implemented with WIN 0.15�慆 pHEMT, including coplanar waveguide power amplifier, broadband power amplifier, sub-harmonic diode and resistive mixer designs. The measured results of the circuit are illustrated as follows; for the coplanar waveguide power amplifier , gain is 14.5 dB, input and output return loss are 8dB and 5.4dB, the output power and power added efficiency at the 1-dB gain compression point are 20.4dBm and 14.1%, the maximum output power and power added efficiency are 22.3dBm and 19.3% ; for the broadband power amplifier , bandwidth is 19GHz to 31GHz, gain is 21.6 dB at 27.1GHz, input and output return loss are 10dB and 4dB, the output power and power added efficiency at the 1-dB gain compression point are 21dBm and 18.6%, the maximum output power and power added efficiency are 21.3dBm and 21.9%; for the sub-harmonic diode mixer, operating at up-converter, the conversion loss is 10.5dB, input power at the 1-dB gain compression point is -3dBm; operating at down-converter, the conversion loss is 11.1dB, input power at the 1-dB gain compression point is 1dBm; the LO-RF and IF-RF isolation are greater than 19dB and 13dB at up-converter operation, the LO-IF and RF-IF isolation are greater than 14dB and 38dB at down-converter operation; for the sub-harmonic resistive mixer, the conversion loss is 10.4 dB, input power at the 1-dB gain compression point is 1dBm, the LO-RF and IF-RF isolation are greater than 30dB and 16dB Hwann-Kaeo Chiou 邱煥凱 2005 學位論文 ; thesis 89 zh-TW |
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碩士 === 國立中央大學 === 通訊工程研究所 === 93 === Title:Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications
National Central University Department of Communication Engineering
Student:Li-Chih Pai Advisor:Dr. Hwann-Kaeo Chiou
Abstract
Millimeter-wave flip-chip RF front-end transmitter circuits design are the main research of this thesis, which apply to Ka band local multipoint distribution service(LMDS). These Ka band circuits are implemented with WIN 0.15�慆 pHEMT, including coplanar waveguide power amplifier, broadband power amplifier, sub-harmonic diode and resistive mixer designs.
The measured results of the circuit are illustrated as follows; for the coplanar waveguide power amplifier , gain is 14.5 dB, input and output return loss are 8dB and 5.4dB, the output power and power added efficiency at the 1-dB gain compression point are 20.4dBm and 14.1%, the maximum output power and power added efficiency are 22.3dBm and 19.3% ; for the broadband power amplifier , bandwidth is 19GHz to 31GHz, gain is 21.6 dB at 27.1GHz, input and output return loss are 10dB and 4dB, the output power and power added efficiency at the 1-dB gain compression point are 21dBm and 18.6%, the maximum output power and power added efficiency are 21.3dBm and 21.9%; for the sub-harmonic diode mixer, operating at up-converter, the conversion loss is 10.5dB, input power at the 1-dB gain compression point is -3dBm; operating at down-converter, the conversion loss is 11.1dB, input power at the 1-dB gain compression point is 1dBm; the LO-RF and IF-RF isolation are greater than 19dB and 13dB at up-converter operation, the LO-IF and RF-IF isolation are greater than 14dB and 38dB at down-converter operation; for the sub-harmonic resistive mixer, the conversion loss is 10.4 dB, input power at the 1-dB gain compression point is 1dBm, the LO-RF and IF-RF isolation are greater than 30dB and 16dB
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author2 |
Hwann-Kaeo Chiou |
author_facet |
Hwann-Kaeo Chiou Li-Chih Pai 白禮智 |
author |
Li-Chih Pai 白禮智 |
spellingShingle |
Li-Chih Pai 白禮智 Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications |
author_sort |
Li-Chih Pai |
title |
Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications |
title_short |
Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications |
title_full |
Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications |
title_fullStr |
Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications |
title_full_unstemmed |
Implementation of Flip-Chip Superheterodyne Transmitter Front-End Circuits for Ka Band Applications |
title_sort |
implementation of flip-chip superheterodyne transmitter front-end circuits for ka band applications |
publishDate |
2005 |
url |
http://ndltd.ncl.edu.tw/handle/71608071812983031188 |
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