Photoluminescence studies of Carbon-Implanted GaN/InGaN M.Q.W. LED

• Main Authors: Ue-Zhi Yang, 楊宇智
• Other Authors: C. T. Lee
• Format: Others
• Language: zh-TW
• Published: 2005
• Online Access: http://ndltd.ncl.edu.tw/handle/20637719102299212217

碩士 === 國立中央大學 === 光電科學研究所 === 93 === The photoluminescence properties of Carbon ion implantation into p-type GaN followed by rapid thermal annealing (RTA) in N2 ambient have been studied. By varying implantation concentrations, the p-type GaN can be converted into n-type GaN. Photoluminescence studies show that a green emission band could be observed from Cimplanted GaN:Mg. It was shown that such a green emission is related to the yellow luminescence observed from epitaxially grown C-doped GaN. The fabrication and characterization of C-implanted InGaN /GaN MQW LED was reported. The EL spectra obtained from the C-implanted LED device operated at 8V exists the peaks centered at 458nm and 525nm.