Physical Properties of Ge Quantum Dots Formed by Selective Oxidation of Si1-xGex-on-insulator

Physical Properties of Ge Quantum Dots Formed by Selective Oxidation of Si1-xGex-on-insulator

碩士 === 國立中央大學 === 電機工程研究所 === 93 === none

Bibliographic Details
Main Authors:	Wei-Ting Lai, 賴威廷
Other Authors:	Pei-Wen Li
Format:	Others
Language:	zh-TW
Published:	2005
Online Access:	http://ndltd.ncl.edu.tw/handle/98684657102882096885

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